to ? 92 1.emitter 2.base 3.collector to-92 plastic-encapsulate transistors MPS750 transistor (pnp) features z general purpose amplifier maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = -0.1ma,i e =0 -60 v collector-emitter breakdown voltage v (br)ceo * i c =-10ma,i b =0 -40 v emitter-base breakdown voltage v (br)ebo i e =-0.01ma,i c =0 -5 v collector cut-off current i cbo v cb =-60v,i e =0 -0.1 a emitter cut-off current i ebo v eb =-4v,i c =0 -0.1 a h fe(1) * v ce =-2v, i c =-50ma 75 h fe(2) * v ce =-2v, i c =-500ma 75 400 h fe(3) * v ce =-2v, i c =-1a 75 dc current gain h fe(4) * v ce =-2v, i c =-2a 40 v ce(sat) (1) * i c =-2a,i b =-200ma -0.5 v collector-emitter saturation voltage v ce(sat) (2) * i c =-1a,i b =-100ma -0.3 v base-emitter saturation voltage v be(sat) * i c =-1a,i b =-100ma -1.2 v base-emitter voltage v be * i c =-1a, v ce =-2v -1.0 v transition frequency f t v ce =-5v,i c =-50ma,f=100mhz 75 mhz *pulse test: pulse width 300 s, duty cycle 2.0%. symbol parameter value unit v cbo collector-base voltage -60 v v ceo collector-emitter voltage -40 v v ebo emitter-base voltage -5 v i c collector current -continuous -2 a p c collector power dissipation 625 mw r ja thermal resistance from junction to ambient 200 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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